Multiple modes of perpendicular magnetization switching scheme in single spin–orbit torque device

Spin orbit torque (SOT) has been considered as one of the promising technologies for next-generation magnetic random access memory (MRAM). So far, SOT widely utilized inducing various modes magnetization switching. However, it is challenging to integrate multiple switching together. In this work we propose a method implementing both unipolar and bipolar perpendicular within single device. The mode could be easily altered by tuning amplitude applied current. We show that field-like plays an important role in process. induces precession case switching, whereas helps generate effective z-component addition, influence key parameters on discussed. Our proposal used design novel reconfigurable logic circuits near future.